| PART |
Description |
Maker |
| RJH60T04DPQA1 |
600V - 30A - IGBT
|
Renesas Electronics Corporation
|
| 6MBI30L-060 |
IGBT(600V/30A)
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| ISL9R3060G2 |
30A 600V Stealth Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| STB3NC60 STB3NC60T4 STB3NC60-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB
N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET
N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
|
SGS Thomson Microelectronics
STMicroelectronics
意法半导
|
| RHRG3060 RHRG3040 |
30A, 400V - 600V Hyperfast Diodes
|
FAIRCHILD[Fairchild Semiconductor]
|
| STK85007 STK850 |
N-channel 30V - 0.0024Ω - 30A - PolarPAK? STripFET Power MOSFET
nullN-channel 30V - 0.0024ヘ - 30A - PolarPAK㈢ STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| RURG3060CC RURG3040 RURG3040CC |
30A, 400V - 600V Ultrafast Dual Diodes
|
FAIRCHILD[Fairchild Semiconductor]
|
| NGTB30N60IHLW |
IGBT 600V 30A FS1 Induction Heating
|
ON Semiconductor
|
| STGW30NB60HD |
N-CHANNEL 30A - 600V TO-247 POWERMESH IGBT
|
ST Microelectronics
|
